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TK11A60D(STA4,Q,M)

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Part No	TK11A60D(STA4,Q,M)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 11A TO220SIS / N-Channel 600 V 11A (Ta) 45W (Tc) Through Hole TO-220SIS
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Toshiba Semiconductor and Storage
Series	π-MOSVII
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	650mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1550 pF @ 25 V
Power Dissipation (Max)	45W (Tc)
Temperature Range - Operating	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK11A60
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	TK11A60D(STA4QM),TK11A60DSTA4QM
Standard Package	50
Win Source Part Number	1121044-TK11A60D(STA4,Q,M)
Ultra Librarian 3D Model	Ultra Librarian TK11A60D(STA4,Q,M) CAD Model

Alternative Products

Description

The TK11A60D(STA4,Q,M) is an N-Channel MOSFET transistor from Toshiba Semiconductor and Storage.

Channel Type: N-Channel
Series: π-MOSVII
Package: TO-220-3 Full Pack
Drain to Source Voltage: 600V
Continuous Drain Current: 11A @ 25°C
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation: 45W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Vgs (Max): ±30V
Operating Temperature: 150°C (TJ)
ECCN: EAR99
MSL Level: 1 (Unlimited)
Application: Discrete Semiconductor Products, Transistors - FETs, MOSFETs - Single

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