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RJK4006DPP-M0#T2 Real Image1 RJK4006DPP-M0#T2 Real Image2
Same model may have multiple batches, images only for reference.
RJK4006DPP-M0#T2 Real Image1 RJK4006DPP-M0#T2 Real Image2
RJK4006DPP-M0#T2 Real Image1 RJK4006DPP-M0#T2 Real Image2
Same model may have multiple batches, images only for reference.

RJK4006DPP-M0#T2

Part No RJK4006DPP-M0#T2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 8A TO220FL  /  N-Channel 400 V 8A (Ta) 29W (Tc) Through Hole TO-220FL
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas Electronics America Inc
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V
Power Dissipation (Max) 29W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FL
Package / Case TO-220-3 Full Pack
Base Product Number RJK4006
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1
Win Source Part Number 1224988-RJK4006DPP-M0#T2
Ultra Librarian 3D Model Ultra Librarian RJK4006DPP-M0#T2 CAD Model

Description

The Renesas Electronics America RJK4006DPP-M0#T2 is a MOSFET (Metal Oxide) N-channel transistor that has a drain to source voltage of 400V and a continuous drain current of 8A @ 25°C.

  • Drain to Source Voltage: 400V
  • Continuous Drain Current: 8A @ 25°C
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
  • Package: through-hole TO-220-3 Full Pack
  • Drive Voltage (Max Rds On, Min Rds On): 10V

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