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Same model may have multiple batches, images only for reference.
TK15S04N1L,LQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK15S04N1L,LQ

Part No TK15S04N1L,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 15A DPAK
Datasheet
TK15S04N1L,LQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 100μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 610pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 46W (Tc)
Maximum Rds On at Id,Vgs 17.8 mOhm @ 7.5A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK+
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1107413-TK15S04N1L,LQ
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TK15S04N1L,LQ CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-performance N-channel power MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 46W
  • Package: DPAK+
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 15A (Ta)
  • Gate-Source Threshold Voltage: 2.5V @ 100μA
  • Maximum Gate Charge: 10nC @ 10V
  • Maximum Rds On @ Id,Vgs: 17.8 mOhm @ 7.5A, 10V
  • Supply and Demand Status: Sufficient

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14+ $8.4280 $117.9920
22+ $8.1647 $179.6234
30+ $7.9014 $237.0420
38+ $7.6380 $290.2440
51+ $6.8480 $349.2480
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