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TK17V65W,LQ

Part No TK17V65W,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description X35 PB-F POWER MOSFET TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 210mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 300 V
Power Dissipation (Max) 156W (Tc)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package 4-DFN-EP (8x8)
Package / Case 4-VSFN Exposed Pad
Base Product Number TK17V65
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 899686-TK17V65W,LQ
Ultra Librarian 3D Model Ultra Librarian TK17V65W,LQ CAD Model

Description

The TK17V65W,LQ is a MOSFET transistor from Toshiba Semiconductor and Storage.

  • Type: Single N-Channel FET
  • Vdss: 650V
  • Id: 17.3A @ 25°C
  • Rds On: 210mOhm
  • Qg: 45nC
  • Package: Surface mount package with a 4-VSFN exposed pad
  • Base Product Number: TK17V65
  • ECCN: EAR99
  • Suitable for: Various applications, including power supplies, motor control, and industrial inverters
  • Capabilities: High voltage and current capabilities
  • Choice: A reliable choice for your MOSFET transistor needs

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