The Toshiba Semiconductor and Storage TK20A60U is a N-Channel MOSFET that offers a maximum power dissipation of 45W (Tc) and a drain-source breakdown voltage of 600V.

• GPTDescription: This MOSFET is designed for use in discrete semiconductor products and has a maximum Rds On @ Id,Vgs of 190 mOhm @ 10A, 10V.
• GPTDescription: It has a gate-source threshold voltage of 5V @ 1mA and a maximum gate charge of 27nC @ 10V.
• GPTDescription: The TK20A60U is mounted through through-hole technology and comes in a TO-220SIS case/package, which has a dimension of TO-220-3 Full Pack.
• GPTDescription: The supply and demand status of this product is limited.