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Same model may have multiple batches, images only for reference.
TK20E60W,S1VX Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK20E60W,S1VX

Part No TK20E60W,S1VX
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20A TO-220 / Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-220 Tube
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.7V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 48nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1680pF @ 300V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 165W (Tc)
Rds On (Maximum) @ Id, Vgs 155 mOhm @ 10A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220
Package TO-220-3
Win Source Part Number 796833-TK20E60W,S1VX
Popularity Medium
Supply and Demand Status Limited
Family Name TK20E60W
ECCN EAR99
Country of Origin China
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK20E60W,S1VX CAD Model

Description

The Toshiba Semiconductor and Storage TK20E60W,S1VX is a MOSFET transistor that belongs to the DTMOSIV series.

  • Current rating: 20A (Ta)
  • Maximum power dissipation: 165W (Tc)
  • Channel type: N
  • Drain-source voltage: 600V
  • Gate-source threshold voltage: 3.7V @ 1mA
  • Input capacitance: 1680pF @ 300V
  • Gate charge: 48nC @ 10V
  • Rds On (Maximum) @ Id, Vgs: 155 mOhm @ 10A, 10V
  • Package: TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.7539 $60.0624
38+ $3.0801 $117.0438
59+ $2.9838 $176.0442
80+ $2.8875 $231.0000
104+ $2.7913 $290.2952
139+ $2.5026 $347.8614
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Availability: 3,427 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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