The Toshiba Semiconductor and Storage MOSFET is a N-Channel polarity electronic component with a maximum power dissipation of 60W (Tc) and a drain-source breakdown voltage of 600V.

• Maximum Rds On @ Id,Vgs: 4.3 Ohm @ 1A, 10V
• Gate-Source Threshold Voltage: 4.4V @ 1mA
• Maximum Gate-Source Voltage: ±30V
• Max Gate Charge: 7nC @ 10V
• Mounting Technology: Through-Hole
• Case/Package: PW-MOLD2, TO-251-3 Stub Leads, IPak
• Continuous Drain Current @ 25°C: 2A (Ta)
• Category: Discrete Semiconductor Products
• Popularity: Medium
• Supply and Demand Status: Balance