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Same model may have multiple batches, images only for reference.
TK32A12N1 Real Image
Same model may have multiple batches, images only for reference.

TK32A12N1

Part No TK32A12N1
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 120V 32A TO-220
Datasheet
TK32A12N1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 120V
Continuous Drain Current at 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 500μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 2000pF @ 60V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 13.8 mOhm @ 16A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 212879-TK32A12N1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK32A12N1 CAD Model

Description

Toshiba Semiconductor and Storage produced this electronic component with Win Source Part Number 212879-TK32A12N1.

  • Component: MOSFET
  • Polarity: N-Channel
  • Maximum Power Dissipation: 30W (Tc)
  • Packaging: Tube/Rail
  • Mounting: Through Hole
  • Category: Discrete Semiconductor Products
  • Drive Voltage: 10V
  • Status: active
  • Temperature Range: 150°C (TJ)
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5775 $57.7500
245+ $0.4747 $116.3015
380+ $0.4597 $174.6860
520+ $0.4447 $231.2440
675+ $0.4297 $290.0475
900+ $0.3858 $347.2200
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Availability: 2,020 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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