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Same model may have multiple batches, images only for reference.
TK370A60F,S4X(S Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK370A60F,S4X(S

Part No TK370A60F,S4X(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH / N-Channel 600 V 15A (Ta) 45W (Tc) Through Hole TO-220SIS
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSIX
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 370mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 2.04mA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 300 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating 150°C
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
ECCN EAR99
HTSUS 8541.29.0095
Other Names 264-TK370A60F,S4X(S-ND,264-TK370A60F,S4X(S,264-TK370A60FS4X(S
Standard Package 1
Win Source Part Number 1020722-TK370A60F,S4X(S
Ultra Librarian 3D Model Ultra Librarian TK370A60F,S4X(S CAD Model

Description

The 1020722-TK370A60F,S4X(S is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 600 V
  • Current: 15A (Ta)
  • Rds On (Max) @ Id, Vgs: 370mOhm @ 7.5A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Package: TO-220-3 Full Pack
  • Temperature: Up to 150°C

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100+ $1.1550 $115.5000
155+ $1.1192 $173.4760
215+ $1.0834 $232.9310
280+ $1.0476 $293.3280
370+ $0.9390 $347.4300
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