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Same model may have multiple batches, images only for reference.
TK39A60W,S4VX Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK39A60W,S4VX

Part No TK39A60W,S4VX
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 39A TO220-3
Datasheet
TK39A60W,S4VX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 1.9mA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4100pF @ 300V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 65 mOhm @ 19.4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1050515-TK39A60W,S4VX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK39A60W,S4VX CAD Model

Description

The Toshiba Semiconductor and Storage N-Channel MOSFET is a high-performance power MOSFET designed for use in a wide range of applications.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 38.8A
  • Power Dissipation: 50W
  • Gate-Source Threshold Voltage: 3.7V @ 1.9mA
  • Maximum Gate Charge: 110nC @ 10V
  • Maximum Rds On @ Id, Vgs: 65 mOhm @ 19.4A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $17.6042 $52.8126
7+ $14.4445 $101.1115
11+ $13.9931 $153.9241
15+ $13.5417 $203.1255
20+ $13.0903 $261.8060
26+ $11.7361 $305.1386
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,200 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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