The TK40J20D,S1F(O is an N-channel MOSFET transistor from Toshiba Semiconductor and Storage. It is a part of the π-MOSVIII series and has a drain to source voltage (Vdss) of 200 V.

• Type: N-Channel MOSFET
• Series: π-MOSVIII
• Drain to Source Voltage (Vdss): 200 V
• Power Dissipation (Max): 260W (Tc)
• Mounting Type: Through-Hole
• Package/Case: TO-3P-3, SC-65-3
• Device Package: TO-3P(N)
• Gate-Source Voltage (Vgs): ±20V
• Operating Temperature: 150°C
• Input Capacitance (Ciss): 4300 pF @ 100 V
• Continuous Drain Current (Id): 40A (Ta) @ 25°C
• On-Resistance (Rds On) (Max): 44mOhm @ 20A and 10V
• Gate Charge (Qg): 100 nC @ 10 V
• Gate Threshold Voltage (Vgs(th)): 3.5V @ 1mA