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TK45P03M1,RQ

Part No TK45P03M1,RQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 45A DPAK-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 200μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1500pF @ 10V
Maximum Gate-Source Voltage ±20V
Maximum Rds On at Id,Vgs 9.7 mOhm @ 22.5A, 10V
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 212890-TK45P03M1,RQ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK45P03M1,RQ CAD Model

Description

The TK45P03M1,RQ is an N-channel MOSFET from Toshiba Semiconductor and Storage that is widely used in various applications.

  • It is a discrete semiconductor product that is designed for high-speed switching applications.
  • The TK45P03M1,RQ is a medium-popularity product with a balanced supply and demand status.
  • The TK45P03M1,RQ is designed to provide high efficiency and reliability in a compact package.
  • It has a drain-source breakdown voltage of 30V and a continuous drain current of 45A @ 25°C.
  • The TK45P03M1,RQ is an ideal choice for applications that require high power and high-speed switching.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5650 $62.6000
90+ $1.2844 $115.5960
140+ $1.2439 $174.1460
195+ $1.2035 $234.6825
250+ $1.1631 $290.7750
335+ $1.0430 $349.4050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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