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TK4A50D(STA4,Q,M)

Name: TK4A50D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: 367105
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	TK4A50D(STA4,Q,M)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 500V 4A TO-220SIS
Datasheet	TK4A50D(STA4,Q,M) Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Tube/Rail
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	500V
Continuous Drain Current at 25°C	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4.4V @ 1mA
Max Gate Charge	9nC @ 10V
Max Input Capacitance	380pF @ 25V
Maximum Gate-Source Voltage	±30V
Power Dissipation (Max)	30W (Tc)
Maximum Rds On at Id,Vgs	2 Ohm @ 2A, 10V
Temperature Range - Operating	150°C (TJ)
Mounting	Through Hole
Case / Package	TO-220SIS
Dimension	TO-220-3 Full Pack
Win Source Part Number	212893-TK4A50D(STA4,Q,M)
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian TK4A50D(STA4,Q,M) CAD Model

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Description

Its supply and demand status is balanced.

This N-channel MOSFET has a maximum power dissipation of 30W and a drain-source breakdown voltage of 500V.
It has a maximum gate charge of 9nC and a maximum input capacitance of 380pF.
Contact the technical support team for more information about this product.

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
70+	$0.8570	$59.9900
165+	$0.7034	$116.0610
255+	$0.6815	$173.7825
355+	$0.6595	$234.1225
455+	$0.6376	$290.1080
610+	$0.5717	$348.7370

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 20,500 pieces

MOQ: 70 pcs

Order Increment : 1 pcs

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