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TK4A60DB

Part No TK4A60DB
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 600V 3.7A 3-Pin(3+Tab) TO-220SIS / MOSFET N-CH 600V 3.7A TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 540pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 1.9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 093861-TK4A60DB
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name TK4A60DB
Introduction Date July 28, 2009
ECCN EAR99
Country of Origin China, Malaysia
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian TK4A60DB CAD Model

Description

The TK4A60DB is an N-Channel MOSFET from Toshiba Semiconductor and Storage.

  • This electronic component belongs to the Discrete Semiconductor Products category.
  • It has a Drain-Source Breakdown Voltage of 600V and a Continuous Drain Current @ 25°C of 3.7A (Ta).
  • The TK4A60DB has a Gate-Source Threshold Voltage of 4.4V @ 1mA and a Max Gate Charge of 11nC @ 10V. and is a high popularity part.
  • The Win Source Part Number for this component is 093861-TK4A60DB.

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2795 $58.6950
510+ $0.2287 $116.6370
785+ $0.2218 $174.1130
1,080+ $0.2148 $231.9840
1,390+ $0.2079 $288.9810
1,865+ $0.1860 $346.8900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,720 pieces
MOQ: 210 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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