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TK4A65D

Part No TK4A65D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 840386-TK4A65D
Ultra Librarian 3D Model Ultra Librarian TK4A65D CAD Model

Description

The TK4A65D is a 650V, 4A N-channel power MOSFET from Toshiba Semiconductor and Storage. This device is designed for high-efficiency power switching applications, offering a balance of low on-resistance and fast switching speed. Its robust design ensures reliability and efficiency in demanding power electronics environments.

Applications

  • Power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • DC-DC converters
  • Lighting ballasts
  • Motor control circuits

Features

  • VDSS (Drain-Source Voltage): 650V
  • ID (Drain Current): 4A
  • RDS(on) (Drain-Source On-Resistance): 1.75 Ω (typical)
  • Gate Threshold Voltage: 2.0 to 4.0 V
  • Channel Type: N-Channel
  • Package: TO-220SIS
  • Operating Temperature Range: -55°C to 150°C
  • Fast Switching Speed: Reduces switching losses.
  • Low On-Resistance: Minimizes conduction losses.
  • Avalanche Energy Guaranteed Offers a good ruggedness.

Benefits

  • High Efficiency: The combination of low on-resistance and fast switching speed contributes to high efficiency in power conversion applications.
  • Reduced Power Loss: Lower RDS(on) minimizes conduction losses, leading to cooler operation and improved system reliability.
  • Simplified Thermal Management: Reduced power dissipation simplifies heatsink requirements, saving space and cost.
  • Improved System Reliability: Robust design and high avalanche energy capability enhance system reliability and longevity.
  • High-Speed Switching: Fast switching characteristics allow for higher frequency operation, reducing the size of passive components and improving power density.

Additional Details

The TK4A65D utilizes advanced trench MOSFET technology to achieve its superior performance. This technology enables a higher cell density, resulting in lower on-resistance and improved switching characteristics. The device is also designed to withstand high avalanche energy, making it suitable for applications with inductive loads. Its TO-220SIS package ensures easy mounting and effective heat dissipation. This MOSFET is compliant with RoHS standards, ensuring environmental friendliness.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16,670+ $0.0035 $58.3450
33,335+ $0.0035 $116.6725
50,000+ $0.0035 $175.0000
66,670+ $0.0035 $233.3450
83,335+ $0.0035 $291.6725
150,000+ $0.0023 $345.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150,030 pieces
MOQ: 16670 pcs
Order Increment : 1 pcs
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