The Toshiba Semiconductor and Storage TK4P60DB is a MOSFET technology-based N-channel polarity discrete semiconductor product.

• It has a drain-source breakdown voltage of 600V and a continuous drain current of 3.7A (Ta).
• The MOSFET has a maximum Rds On of 2 Ohm @ 1.9A, 10V and a gate-source threshold voltage of 4.4V @ 1mA.
• It has a maximum gate-source voltage of ±30V and a maximum gate charge of 11nC @ 10V.
• The TK4P60DB is available in D-Pak packaging and is SMD (SMT) mountable.
• It has a TO-252-3, DPak (2 Leads + Tab), SC-63 dimension.
• The supply and demand status is balanced, and the estimated EOL date is 2026.