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TK4R4P06PL,RQ

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Part No	TK4R4P06PL,RQ
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CHANNEL 60V 58A DPAK / N-Channel 60 V 58A (Tc) 87W (Tc) Surface Mount DPAK
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Package	Tape & Reel
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.4mOhm @ 29A, 10V
Vgs(th) (Max) @ Id	2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	48.2 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3280 pF @ 30 V
Power Dissipation (Max)	87W (Tc)
Temperature Range - Operating	175°C
Mounting	SMD (SMT)
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	TK4R4P06
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	TK4R4P06PLRQ(S2,TK4R4P06PLRQ,TK4R4P06PL,RQTR,TK4R4P06PLRQCT,TK4R4P06PLRQDKR,TK4R4P06PL,RQ(S2,TK4R4P06PLRQTR
Standard Package	2,500
Win Source Part Number	1099461-TK4R4P06PL,RQ
Ultra Librarian 3D Model	Ultra Librarian TK4R4P06PL,RQ CAD Model

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Description

The TK4R4P06PL,RQ from Toshiba Semiconductor and Storage is an N-channel MOSFET that has a drain to source voltage (Vdss) of 60V and a current - continuous drain (Id) of 58A (Tc) @ 25°C.

Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id): 58A (Tc) @ 25°C
Maximum Power Dissipation: 87W (Tc)
Gate Charge (Qg): 48.2 nC @ 10V
Mounting Technology: SMD (SMT)
Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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