The TK50P03M1(T6RSS-Q) is an electronic component manufactured by Toshiba Semiconductor and Storage.

• It is a MOSFET with an N-channel polarity and a power dissipation of 47W (Tc).
• The supply and demand status of this product is sufficient.
• It has a drain-source breakdown voltage of 30V, a continuous drain current of 50A (Ta), and a gate-source threshold voltage of 2.3V @ 200μA.
• The maximum gate-source voltage is ±20V and the maximum Rds On @ Id,Vgs is 7.5 mOhm @ 25A, 10V.
• This component is commonly used in various discrete semiconductor products.