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TK60F10N1L,LXGQ

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Part No	TK60F10N1L,LXGQ
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 60A TO220SM / N-Channel 100 V 60A (Ta) 205W (Tc) Surface Mount TO-220SM(W)
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tape & Reel
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	6.11mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4320 pF @ 10 V
Power Dissipation (Max)	205W (Tc)
Temperature Range - Operating	175°C
Mounting	SMD (SMT)
Supplier Device Package	TO-220SM(W)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number	TK60F10
MSL Level	3 (168 Hours)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	264-TK60F10N1LLXGQDKR,264-TK60F10N1LLXGQCT,264-TK60F10N1LLXGQTR,TK60F10N1L,LXGQ(O
Standard Package	1,000
Win Source Part Number	1099420-TK60F10N1L,LXGQ
Ultra Librarian 3D Model	Ultra Librarian TK60F10N1L,LXGQ CAD Model

Alternative Products

Description

The electronic component with Id 999246 is a N-Channel MOSFET transistor that belongs to the U-MOSVIII-H series.

Package Type: Tape & Reel
Standard Package: 1,000 units
Maximum Drain to Source Voltage (Vdss): 100V
Continuous Drain Current (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 500μA
Power Dissipation (Max): 205W (Tc)
Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-220SM(W)
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Maximum Vgs: ±20V
Operating Temperature Range: 175°C

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