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Same model may have multiple batches, images only for reference.
TK6A65W,S5X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK6A65W,S5X

Part No TK6A65W,S5X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 5.8A TO-220SIS / Trans MOSFET N-CH Si 650V 5.8A 3-Pin(3+Tab) TO-220SIS Magazine
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.5V @ 180μA
Gate Charge (Qg) (Maximum) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 390pF @ 300V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 30W (Tc)
Rds On (Maximum) @ Id, Vgs 1 Ohm @ 2.9A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220SIS
Package TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 796848-TK6A65W,S5X
Popularity Medium
Supply and Demand Status Limited
Family Name TK6A65W
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK6A65W,S5X CAD Model

Description

The Toshiba Semiconductor and Storage TK6A65W,S5X is a MOSFET transistor.

  • Series: DTMOSIV
  • Package: TO-220-3 Full Pack, Isolated Tab
  • Maximum power dissipation: 30W
  • Continuous drain current: 5.8A @ 25°C
  • Drain source voltage: 650V
  • Gate source threshold voltage: 3.5V @ 180µA
  • Input capacitance: 390pF @ 300V
  • Gate charge: 11nC @ 10V
  • Rds On: 1 Ohm @ 2.9A and 10V
  • Alternative parts: R6006JNX, R6006JNXC7G, R6009JNXC7G, and TSM10N60CI C0G

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Quantity Unit Price Ext. Price
5+ $13.4835 $67.4175
11+ $11.0637 $121.7007
17+ $10.7184 $182.2128
23+ $10.3719 $238.5537
29+ $10.0266 $290.7714
39+ $8.9894 $350.5866
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