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Same model may have multiple batches, images only for reference.
TK7A90E Real Image
Same model may have multiple batches, images only for reference.

TK7A90E

Part No TK7A90E
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V TO220SIS
Datasheet
TK7A90E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 700μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 3.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 212926-TK7A90E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK7A90E CAD Model

Description

The Toshiba Semiconductor and Storage TK7A90E is a MOSFET transistor with a maximum power dissipation of 45W (Tc).

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 900V
  • Maximum Rds On at Id,Vgs: 2 Ohm @ 3.5A, 10V
  • Gate-Source Threshold Voltage: 4V @ 700μA
  • Maximum Gate Charge: 32nC @ 10V
  • Maximum Input Capacitance: 1350pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Market: in the open market
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6964 $52.2300
175+ $0.5715 $100.0125
275+ $0.5536 $152.2400
375+ $0.5357 $200.8875
485+ $0.5179 $251.1815
650+ $0.4643 $301.7950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,639 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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