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Same model may have multiple batches, images only for reference.
TK8R2E06PL,S1X
Same model may have multiple batches, images only for reference.

TK8R2E06PL,S1X

Part No TK8R2E06PL,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description PB-F POWER MOSFET TRANSISTOR TO-
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series U-MOSIX-H
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 30 V
Power Dissipation (Max) 81W (Tc)
Temperature Range - Operating 175°C
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Standard Package 50 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1099491-TK8R2E06PL,S1X
Ultra Librarian 3D Model Ultra Librarian TK8R2E06PL,S1X CAD Model

Description

The TK8R2E06PL,S1X is a single N-channel MOSFET from Toshiba Semiconductor and Storage.

  • Series: U-MOSIX-H
  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 50A
  • On-Resistance: 8.2mOhm @ 25A and 10V gate-source voltage
  • Gate Threshold Voltage: 2.5V
  • Maximum Power Dissipation: 81W
  • Mounting: Through-Hole
  • Package: TO-220-3

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