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Same model may have multiple batches, images only for reference.
TK9A45D(STA4,Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK9A45D(STA4,Q,M)

Part No TK9A45D(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 450V 9A TO-220SIS
Datasheet
TK9A45D(STA4,Q,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 450V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 800pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 770 mOhm @ 4.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 1107472-TK9A45D(STA4,Q,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK9A45D(STA4,Q,M) CAD Model

Description

The TK9A45D(STA4,Q,M) is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 40W (Tc)
  • Maximum Continuous Drain Current: 9A (Ta) @ 25°C
  • Drain-Source Breakdown Voltage: 450V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 770 mOhm @ 4.5A, 10V
  • Case/Package: TO-220SIS
  • Dimension: TO-220-3 Full Pack
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.7055 $58.2330
15+ $7.9637 $119.4555
23+ $7.7142 $177.4266
31+ $7.4659 $231.4429
41+ $7.2164 $295.8724
54+ $6.4703 $349.3962
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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