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Same model may have multiple batches, images only for reference.
TP89R103NL,LQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TP89R103NL,LQ

Part No TP89R103NL,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 30V 15A 8SOP
Datasheet
TP89R103NL,LQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 100μA
Max Gate Charge 9.8nC @ 10V
Max Input Capacitance 820pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Tc)
Maximum Rds On at Id,Vgs 9.1 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1110997-TP89R103NL,LQ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TP89R103NL,LQ CAD Model

Description

The Toshiba Semiconductor and Storage 470116 is an N-channel MOSFET transistor in an 8-SOP package.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 15A @ 25°C
  • Maximum Rds On @ Id, Vgs: 9.1 mOhm @ 7.5A, 10V
  • Gate-Source Threshold Voltage: 2.3V @ 100μA
  • Maximum Gate Charge: 9.8nC @ 10V
  • Maximum Input Capacitance: 820pF @ 15V
  • Power Dissipation: 1W (Tc)
  • Operating Temperature: 150°C
  • Status: Active
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4432 $59.8320
320+ $0.3637 $116.3840
495+ $0.3523 $174.3885
680+ $0.3410 $231.8800
880+ $0.3296 $290.0480
1,175+ $0.2954 $347.0950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,030 pieces
MOQ: 135 pcs
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