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TPC6503

Part No TPC6503
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description Transistor Silicon NPN Epitaxial Type
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 375476-TPC6503
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC6503 CAD Model

Description

The TPC6503 is an N-channel power MOSFET from Toshiba Semiconductor and Storage, designed for efficient power management in various applications. This MOSFET features a low on-resistance (R<sub>DS(on)), which minimizes power loss during switching and conduction, leading to improved energy efficiency. Its fast switching speed makes it suitable for high-frequency applications such as DC-DC converters and motor control circuits.

Applications:

  • DC-DC Converters: Used in voltage regulation and power conversion circuits.
  • Load Switching: For efficient control of power to various loads.
  • Power Management in Portable Devices: Used in smartphones, tablets, and laptops.
  • Motor Control: Suitable for controlling the speed and torque of small motors.
  • Battery Management Systems: For charging and discharging control in battery-powered applications.

Features:

  • Low On-Resistance (R<sub>DS(on)): Minimizes power loss and improves efficiency.
  • Fast Switching Speed: Enables efficient high-frequency operation.
  • Logic Level Gate Drive: Facilitates easy interfacing with microcontrollers and logic circuits.
  • Surface Mount Package: Enables efficient PCB assembly.
  • High Avalanche Energy: Provides robustness against voltage spikes.

Benefits:

  • Increased Efficiency: Lower R<sub>DS(on) reduces heat generation and improves overall system efficiency.
  • Simplified Circuit Design: Logic-level gate drive simplifies interfacing with control circuits.
  • Compact Design: Surface mount package enables space-saving designs.
  • Improved Reliability: High avalanche energy rating enhances device reliability under transient conditions.
  • Reduced Power Consumption: Optimized for low-voltage operation, minimizing power usage.

Additional Details:

The TPC6503 typically features an R<sub>DS(on) of around 7 mΩ at a gate-source voltage (V<sub>GS) of 4.5V. Its gate threshold voltage (V<sub>GS(th)) is between 1V and 2.5V, allowing for direct control from standard logic levels. The maximum drain current (I<sub>D) can be up to 20A, depending on the specific operating conditions and the effectiveness of the heat sinking. It is commonly available in surface-mount packages like SOP-8, which is designed for efficient thermal dissipation and ease of integration in modern electronic designs. The operating temperature range is typically from -55°C to +150°C, making it suitable for a wide range of environments. The high performance and robustness of the TPC6503 make it a reliable component for a variety of power management applications.

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