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Same model may have multiple batches, images only for reference.
SPB42N03S2L13T Real Image
Same model may have multiple batches, images only for reference.

SPB42N03S2L13T

Part No SPB42N03S2L13T
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPB42N03S2L13T Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12.6mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 2V @ 37µA
Gate Charge (Qg) (Max) @ Vgs 30.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1130 pF @ 25 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SPB42N
Other Names SP000016256
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278302-SPB42N03S2L13T
Ultra Librarian 3D Model Ultra Librarian SPB42N03S2L13T CAD Model

Description

The Infineon Technologies SPB42N03S2L13T is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Series: OptiMOS™
  • Package: 1,000
  • Power Dissipation: 83W (Tc)
  • Drain-Source Voltage: 30V
  • Continuous Drain Current: 42A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 12.6mOhm @ 21A, 10V
  • Gate-Source Threshold Voltage: 2V @ 37μA
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
  • Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V

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