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TPC6601(TE85L,F)

Part No TPC6601(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog HOT - SALES and EOL Components (T)
Datasheet
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 056768-TPC6601(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC6601(TE85L,F) CAD Model

Description

The TPC6601(TE85L,F) is a specific variant of the TPC6601 N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. The suffix (TE85L,F) typically indicates specific packaging or production characteristics. Like the base TPC6601, this MOSFET is designed for high-efficiency switching applications, aiming to minimize power loss and maximize performance in power management circuits.

Applications:

  • DC-DC Converters: Used in various DC-DC converter topologies like buck, boost, and buck-boost configurations.
  • Motor Control: Applied in motor control circuits for efficient power switching in driving motors.
  • Power Supplies: Suitable for use in both AC-DC and DC-DC power supplies for enhanced efficiency.
  • Load Switching: Used for efficient and low-loss power switching to various loads.
  • LED Lighting: Employed in LED driver circuits to provide efficient and controlled power.

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses and improves overall efficiency.
  • Fast Switching Speed: Facilitates efficient operation at high frequencies, reducing switching losses.
  • Logic Level Gate Drive: Simplifies interfacing with standard logic circuits and microcontrollers.
  • Surface Mount Package: Designed for automated assembly and compact device integration.
  • High Avalanche Energy: Enhances device robustness against voltage spikes and inductive loads.

Benefits:

  • Increased Efficiency: Low RDS(on) reduces heat generation, leading to higher energy efficiency.
  • Simplified Circuit Design: Logic level gate drive allows for direct connection to control circuits.
  • Compact Footprint: Surface mount package enables smaller and denser circuit board designs.
  • Enhanced Reliability: High avalanche energy capability increases the device's ability to withstand transient conditions.
  • Reduced Power Consumption: Efficient switching characteristics minimize power usage in diverse applications.

Additional Details:

The TPC6601(TE85L,F) typically features an RDS(on) of approximately 4.5 mΩ at a gate-source voltage (VGS) of 4.5V. The gate threshold voltage (VGS(th)) generally falls within the range of 1V to 2.5V, ensuring compatibility with various logic voltage levels. The maximum drain current (ID) can reach up to 30A, depending on thermal management and operating conditions. This variant is commonly available in surface-mount packages like SOP-Advance (WF), which are designed for efficient heat dissipation. The operating temperature range is typically between -55°C and +150°C, making it suitable for a wide range of environmental conditions. The specific (TE85L,F) suffix may refer to tape and reel packaging or other manufacturing specifications relevant to automated assembly processes.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
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