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TPC8021-H

Part No TPC8021-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A SOP8 2-6J1B
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 640pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 17 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 056778-TPC8021-H
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPC8021-H CAD Model

Description

The Toshiba Semiconductor and Storage 056778-TPC8021-H is a MOSFET electronic component that is widely used in various electronic applications.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Popularity: Medium
  • Manufacturer's Homepage: www.toshiba.semicon-storage.com

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.0543 $60.6516
28+ $4.1476 $116.1328
44+ $4.0182 $176.8008
60+ $3.8877 $233.2620
77+ $3.7584 $289.3968
103+ $3.3703 $347.1409
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 48,500 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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