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Same model may have multiple batches, images only for reference.
TPC8117(TE12L,Q,M)
Same model may have multiple batches, images only for reference.

TPC8117(TE12L,Q,M)

Part No TPC8117(TE12L,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans Mosfet P-ch 30V 18A 8-PIN Sop T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Case / Package SOP
Continuous Drain Current (ID) 18 A
Drain to Source Breakdown Voltage -30 V
Drain to Source Resistance 3.9 mΩ
Fall Time 300 ns
Gate to Source Voltage (Vgs) 20 V
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 8
Power Dissipation 1.9 W
Radiation Hardening No
Rise Time 10 ns
RoHS Compliant
Win Source Part Number 1131264-TPC8117(TE12L,Q,M)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPC8117(TE12L,Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage TPC8117(TE12L,Q,M) is a MOSFET transistor with a power dissipation of 1.9W.

  • Power Dissipation: 1.9W
  • Package: SOP
  • Popularity: Medium
  • Mounting Type: Surface Mount
  • RoHS Compliant: Yes
  • Radiation Hardening: No
  • Minimum Operating Temperature: -55 °C
  • Maximum Operating Temperature: 150 °C
  • Continuous Drain Current (ID): 18A
  • Drain to Source Breakdown Voltage: -30V
  • Gate to Source Voltage (Vgs): 20V

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