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Same model may have multiple batches, images only for reference.
TPCA8025
Same model may have multiple batches, images only for reference.

TPCA8025

Part No TPCA8025
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A 8SOIC ADV
Datasheet
TPCA8025 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 49nC @ 10V
Max Input Capacitance 2200pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 20A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 056444-TPCA8025
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPCA8025 CAD Model

Description

This electronic component is a MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Win Source Part Number: 056444-TPCA8025
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Power Dissipation: 1.6W (Ta), 45W (Tc)
  • Temperature Range: 150°C (TJ)
  • Case / Package: 8-SOP Advance (5x5)
  • Maximum Drain-Source Breakdown Voltage: 30V

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