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Same model may have multiple batches, images only for reference.
TPCA8031-H(TE12L,Q
Same model may have multiple batches, images only for reference.

TPCA8031-H(TE12L,Q

Part No TPCA8031-H(TE12L,Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 24A SOP-8 ADV
Datasheet
TPCA8031-H(TE12L,Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 2150pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 12A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 1111118-TPCA8031-H(TE12L,Q
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCA8031-H(TE12L,Q CAD Model

Description

The Toshiba Semiconductor and Storage TPCA8031-H(TE12L,Q is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 24A at 25°C.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Product Name: TPCA8031-H(TE12L,Q
  • MOSFET Type: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 24A
  • Power Dissipation: 1.6W (Ta), 30W (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Applications: Power management, motor control, and lighting
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Balanced

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