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Same model may have multiple batches, images only for reference.
TPCC8067-H Real Image
Same model may have multiple batches, images only for reference.

TPCC8067-H

Part No TPCC8067-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A 8TSON-ADV
Datasheet
TPCC8067-H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 100μA
Max Gate Charge 9.5nC @ 10V
Max Input Capacitance 690pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta), 15W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 4.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSON Advance (3.3x3.3)
Dimension 8-PowerVDFN
Win Source Part Number 213288-TPCC8067-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCC8067-H CAD Model

Description

The Toshiba Semiconductor and Storage TPCC8067-H is an N-Channel MOSFET that is designed for use in different electronic applications.

  • Maximum Power Dissipation: 700mW (Ta), 15W (Tc)
  • Continuous Drain Current: 9A (Ta) @ 25°C
  • Maximum Rds On: 25 mOhm @ 4.5A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Popularity: medium popularity product
  • Supply and Demand Status: balance supply and demand status.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4851 $58.2120
290+ $0.3985 $115.5650
450+ $0.3858 $173.6100
620+ $0.3731 $231.3220
800+ $0.3615 $289.2000
1,075+ $0.3234 $347.6550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,560 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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