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Same model may have multiple batches, images only for reference.
TPCF8304 Real Image
Same model may have multiple batches, images only for reference.

TPCF8304

Part No TPCF8304
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 3.2A VS-8
Datasheet
TPCF8304 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.2A
Maximum Rds On at Id,Vgs 72 mOhm @ 1.6A, 10V
Gate-Source Threshold Voltage 1.2V @ 1mA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 600pF @ 10V
Maximum Power Dissipation 330mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-8 (2.9x1.5)
Win Source Part Number 043262-TPCF8304
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCF8304 CAD Model

Description

The Toshiba Semiconductor and Storage 043262-TPCF8304 is a 2 P-Channel (Dual) Logic Level Gate FET.

  • FET Type: Logic Level Gate
  • Application: Discrete Semiconductor Products
  • Power Dissipation: 330mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.2A @ 25°C
  • Gate-Source Threshold Voltage: 1.2V @ 1mA
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Input Capacitance: 600pF @ 10V
  • Maximum Rds On: 72 mOhm @ 1.6A, 10V
  • Supply and Demand: Balanced

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