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Same model may have multiple batches, images only for reference.
TPH3R203NL,L1Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPH3R203NL,L1Q

Part No TPH3R203NL,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 47A 8-SOP
Datasheet
TPH3R203NL,L1Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 300μA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 2100pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 44W (Tc)
Maximum Rds On at Id,Vgs 3.2 mOhm @ 23.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 1111182-TPH3R203NL,L1Q
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPH3R203NL,L1Q CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-performance N-channel MOSFET that is designed to provide a reliable and efficient power supply solution.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Channel Polarity: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 47A (Tc)
  • Gate-Source Threshold Voltage: 2.3V @ 300μA
  • Maximum Rds On @ Id,Vgs: 3.2 mOhm @ 23.5A, 10V
  • Package: 8-SOP Advance (5x5)
  • Operating Temperature Range: 150°C (TJ)
  • Supply and Demand Status: Balanced

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