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Same model may have multiple batches, images only for reference.
TPH5R906NH,L1Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPH5R906NH,L1Q

Part No TPH5R906NH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 28A 8-SOP ADV
Datasheet
TPH5R906NH,L1Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 28A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 300μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 3100pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 57W (Tc)
Maximum Rds On at Id,Vgs 5.9 mOhm @ 14A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 1111185-TPH5R906NH,L1Q
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPH5R906NH,L1Q CAD Model

Description

The Toshiba Semiconductor and Storage TPH5R906NH,L1Q is an active electronic component that belongs to the Discrete Semiconductor Products category.

  • Supply and Demand Status: Balanced
  • Manufacturer: Toshiba Semiconductor and Storage
  • Win Source Part Number: 1111185
  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 28A @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 5.9 mOhm @ 14A, 10V
  • Applications: Power supplies, motor control, and lighting control

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42+ $2.7593 $115.8906
65+ $2.6727 $173.7255
90+ $2.5860 $232.7400
116+ $2.5006 $290.0696
155+ $2.2419 $347.4945
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