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Same model may have multiple batches, images only for reference.
TPN2010FNH,L1Q
Same model may have multiple batches, images only for reference.

TPN2010FNH,L1Q

Part No TPN2010FNH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 250V 5.6A 8TSON
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 198mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 100 V
Power Dissipation (Max) 700mW (Ta), 39W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.1x3.1)
Case / Package 8-PowerVDFN
Package Tape & Reel
Supply and Demand Status Normal
Win Source Part Number 1495179-TPN2010FNH,L1Q
Ultra Librarian 3D Model Ultra Librarian TPN2010FNH,L1Q CAD Model

Description

N

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $1.9800 $51.4800
62+ $1.6246 $100.7252
96+ $1.5738 $151.0848
132+ $1.5231 $201.0492
170+ $1.4723 $250.2910
228+ $1.3200 $300.9600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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