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Same model may have multiple batches, images only for reference.
TPN4R303NL,L1Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPN4R303NL,L1Q

Part No TPN4R303NL,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 63A 8TSON
Datasheet
TPN4R303NL,L1Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 200μA
Max Gate Charge 14.8nC @ 10V
Max Input Capacitance 1400pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta), 34W (Tc)
Maximum Rds On at Id,Vgs 4.3 mOhm @ 20A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSON Advance (3.3x3.3)
Dimension 8-PowerVDFN
Win Source Part Number 1111263-TPN4R303NL,L1Q
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPN4R303NL,L1Q CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-performance N-Channel MOSFET designed for various applications.

  • Power Dissipation: 700mW (Ta), 34W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 40A (Tc)
  • Gate-Source Threshold Voltage: 2.3V @ 200μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 4.3 mOhm @ 20A, 10V
  • Maximum Gate Charge: 14.8nC @ 10V
  • Maximum Input Capacitance: 1400pF @ 15V
  • Operating Temperature Range: 150°C (TJ)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6823 $57.9955
210+ $0.5599 $117.5790
320+ $0.5424 $173.5680
445+ $0.5248 $233.5360
570+ $0.5074 $289.2180
765+ $0.4548 $347.9220
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Availability: 46,714 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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