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Same model may have multiple batches, images only for reference.
TPW5200FNH,L1Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPW5200FNH,L1Q

Part No TPW5200FNH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description PB-F POWER MOSFET TRANSISTOR DSO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 100 V
Power Dissipation (Max) 800mW (Ta), 142W (Tc)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerWDFN
Standard Package 5,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 735455-TPW5200FNH,L1Q
Ultra Librarian 3D Model Ultra Librarian TPW5200FNH,L1Q CAD Model

Description

The 661998 is a N-Channel MOSFET transistor from Toshiba Semiconductor and Storage.

  • Series: U-MOSVIII-H
  • Drain to Source Voltage (Vdss): 250V
  • Continuous Drain Current (Id): 26A @ 25°C
  • Rds On (Max): 52mOhm @ 13A and 10V
  • Gate Charge (Qg): 22nC @ 10V
  • Power Dissipation: 800mW (Ta) and 142W (Tc)
  • Mount: Surface Mount Device
  • Package: 8-PowerWDFN

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64+ $5.4412 $348.2368
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