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Same model may have multiple batches, images only for reference.
TTC009,F(J Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TTC009,F(J

Part No TTC009,F(J
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 3A 80V TO220-3
Datasheet
TTC009,F(J Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity NPN
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 500mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 500mA, 5V
Maximum Power Dissipation 2W
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220NIS
Win Source Part Number 1114856-TTC009,F(J
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TTC009,F(J CAD Model

Description

The TTC009,F(J is a NPN transistor with a maximum collector-emitter breakdown voltage of 80V and a maximum collector current of 3A.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: NPN
  • Maximum Collector-Emitter Breakdown Voltage: 80V
  • Maximum Collector Current: 3A
  • Typical Gain: 100 @ 500mA and 5V
  • Collector Cut-Off Current (ICBO): 100nA
  • Maximum Power Dissipation: 2W
  • Maximum Saturation Voltage: 500mV @ 100mA and 1A
  • Mounting: through-hole technology
  • Package: TO-220NIS case
  • Use: discrete semiconductor products
  • Temperature Range: -150°C (TJ)
  • Popularity: medium
  • Packaging: bulk

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