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Same model may have multiple batches, images only for reference.
ULN2803APG(CNHZN) Real Image
Same model may have multiple batches, images only for reference.

ULN2803APG(CNHZN)

Part No ULN2803APG(CNHZN)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 8NPN DARL 50V 0.5A 18DIP
Datasheet
ULN2803APG(CNHZN) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Obsolete(EOL)
Transistor Polarity 8 NPN Darlington
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min) 1000 @ 350mA, 2V
Maximum Power Dissipation 1.47W
Temperature Range - Operating -40°C to 85°C (TA)
Mounting Through Hole
Case / Package 18-DIP
Win Source Part Number 084015-ULN2803APG(CNHZN)
Family Name ULN2803APG
Introduction Date February 14, 2006
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ULN2803APG(CNHZN) CAD Model

Description

The ULN2803APG(CNHZN) is a NPN Darlington transistor manufactured by Toshiba Semiconductor and Storage.

  • Mounting: Through-hole
  • Package: Tube/rail
  • Maximum Current Collector: 500mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 1.47W
  • Typical Gain (hFE): 1000 @ 350mA and 2V
  • Status: Obsolete
  • Compliance: Halogen-free
  • Supply and Demand Status: Sufficient

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Quantity Unit Price Ext. Price
40+ $1.4918 $59.6720
85+ $1.3956 $118.6260
130+ $1.3476 $175.1880
185+ $1.2513 $231.4905
240+ $1.2032 $288.7680
300+ $1.1550 $346.5000
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