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Same model may have multiple batches, images only for reference.
2N6660-E3 Real Image
Same model may have multiple batches, images only for reference.

2N6660-E3

Part No 2N6660-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 990MA TO-205
Datasheet
2N6660-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 50pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 725mW (Ta), 6.25W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-205AF (TO-39)
Dimension TO-205AD, TO-39-3 Metal Can
Win Source Part Number 197474-2N6660-E3
Popularity Medium
Supply and Demand Status Balance
Quantity per package 100
Ultra Librarian 3D Model Ultra Librarian 2N6660-E3 CAD Model

Description

Description

The 2N6660-E3 is a reliable N-channel MOSFET designed for high-speed switching applications. This component is ideal for projects requiring high energy efficiency and minimal power loss. Its robust construction ensures optimal performance even in demanding environments.

Features and Benefits

  • Low On-Resistance to minimize power loss
  • Efficient high-speed switching capability
  • Durable and reliable in harsh conditions

Applications

  • DC-DC converters
  • Switching regulators
  • Motor control circuits
  • Automotive electronics

Additional details include a thermal response that's highly adaptable for temperature-critical applications.

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