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2N7002-T1-GE3

Part No 2N7002-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 115MA SOT23
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Input Capacitance 50pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200mW (Ta)
Maximum Rds On at Id,Vgs 7.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1004067-2N7002-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2N7002-T1-GE3 CAD Model

Description

The Vishay 2N7002-T1-GE3 is an N-Channel MOSFET that has a drain-source breakdown voltage of 60V.

  • Drain-Source Breakdown Voltage: 60V
  • Maximum Input Capacitance: 50pF @ 25V
  • Maximum Rds On @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
  • Power Dissipation (Max): 200mW (Ta)
  • Case/Package: TO-236
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Popularity: popular
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1426 $50.6230
750+ $0.1336 $100.2000
1,165+ $0.1291 $150.4015
1,670+ $0.1200 $200.4000
2,165+ $0.1155 $250.0575
2,705+ $0.1110 $300.2550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 80,979 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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