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IRF634PBF

Part No IRF634PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 8.1A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 770pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 5.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017452-IRF634PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF634PBF CAD Model

Description

The Vishay IRF634PBF is an N-Channel MOSFET with a drain-source breakdown voltage of 250V.

  • Continuous Drain Current: 8.1A (Tc) @ 25°C
  • Power Dissipation (max): 74W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Mounting: Through-hole
  • Technology: MOSFET
  • Polarity: N-Channel
  • Drive Voltage (max Rds On, Min Rds On): 10V
  • Maximum Rds On at Id,Vgs: 450 mOhm @ 5.1A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 41nC @ 10V
  • Maximum Input Capacitance: 770pF @ 25V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-220AB case
  • Dimension: TO-220-3
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8166 $61.2450
175+ $0.6701 $117.2675
270+ $0.6491 $175.2570
370+ $0.6282 $232.4340
480+ $0.6073 $291.5040
640+ $0.5445 $348.4800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,100 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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