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Same model may have multiple batches, images only for reference.
IRF640LPBF
Same model may have multiple batches, images only for reference.

IRF640LPBF

Part No IRF640LPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 18A TO-262
Datasheet
IRF640LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 130W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 205304-IRF640LPBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRF640LPBF CAD Model

Description

The Vishay IRF640LPBF is an N-channel MOSFET with a drain-source breakdown voltage of 200V.

  • Continuous Drain Current: 18A @ 25°C
  • Maximum Rds On: 180 mOhm @ 11A and 10V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 70nC @ 10V
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Application: Power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6052 $60.5200
235+ $0.4967 $116.7245
360+ $0.4816 $173.3760
500+ $0.4655 $232.7500
645+ $0.4505 $290.5725
860+ $0.4043 $347.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,380 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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