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Same model may have multiple batches, images only for reference.
IRF640STRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF640STRRPBF

Part No IRF640STRRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 18A D2PAK
Datasheet
IRF640STRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 130W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046542-IRF640STRRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF640STRRPBF CAD Model

Description

The Vishay IRF640STRRPBF MOSFET is a powerful N-channel transistor.

  • Maximum Power Dissipation: 3.1W @ Ta and 130W @ Tc
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 18A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 70nC @ 10V
  • Maximum Rds On: 180 mOhm @ 11A and 10V
  • Application: Discrete Semiconductor Products
  • Package: TO-263 (D2Pak)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1792 $53.0640
95+ $1.1045 $104.9275
145+ $1.0672 $154.7440
205+ $0.9926 $203.4830
265+ $0.9553 $253.1545
330+ $0.9180 $302.9400
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Availability: 5,210 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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