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Same model may have multiple batches, images only for reference.
IRF730PBF
Same model may have multiple batches, images only for reference.

IRF730PBF

Part No IRF730PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 5.5A TO-220AB
Datasheet
IRF730PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069350-IRF730PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF730PBF CAD Model

Description

The IRF730PBF is an N-channel MOSFET from Vishay.

  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current: 5.5A (Tc)
  • Maximum Rds On: 1 Ohm @ 3.3A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Max Input Capacitance: 700pF @ 25V
  • Suitable for Use In: A wide range of applications, including power supplies, motor control, and lighting
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4108 $51.3500
260+ $0.3848 $100.0480
405+ $0.3718 $150.5790
580+ $0.3458 $200.5640
755+ $0.3328 $251.2640
940+ $0.3198 $300.6120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,880 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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