The IRF734PBF is an N-channel power MOSFET from Vishay Semiconductors. It is designed for high-speed switching applications, such as DC-DC converters, power inverters, and motor drives. This MOSFET offers low on-resistance and gate charge, resulting in efficient and reliable performance.

Applications

• DC-DC converters.
• Power inverters.
• Motor drives.
• Power management circuits.
• Solid-state relays.

Features

• Voltage Rating: 400V
• Drain Current: 1.7A
• On-Resistance: 3.3 Ohms @ VGS = 10V
• Gate Charge: 4.5 nC
• Avalanche Energy: 20 mJ
• Operating Temperature: -55°C to +150°C
• Package: TO-220AB
• Lead-Free

Benefits

• Efficient power conversion due to low on-resistance and gate charge.
• High-speed switching capability for improved performance in dynamic applications.
• Robust design with high avalanche energy rating.
• Wide operating temperature range for reliable operation in various environments.
• Easy to mount and heatsink with the TO-220AB package.
• Environmentally friendly due to lead-free construction.

Additional Details

The IRF734PBF utilizes advanced HEXFET power MOSFET technology to achieve its high performance. The low on-resistance minimizes conduction losses, while the low gate charge reduces switching losses. The TO-220AB package provides excellent thermal conductivity, allowing for efficient heat dissipation. This MOSFET is commonly used in power supplies for computers, servers, and industrial equipment. It is also suitable for use in solar inverters and electric vehicle motor drives. The PBF suffix indicates a lead-free version of the component.

Specifications:

• Voltage: 400V
• Current: 1.7A
• RDS(on): 3.3 Ohms
• Qg: 4.5 nC
• Operating Temperature: -55°C to +150°C
• Package: TO-220AB