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IRF7822TR Vishay
Same model may have multiple batches, images only for reference.

IRF7822TR

Part No IRF7822TR
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 18A 8-SOIC
Datasheet
IRF7822TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 60nC @ 5V
Max Input Capacitance 5500pF @ 16V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.1W (Ta)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 15A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 092667-IRF7822TR
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7822TR CAD Model

Description

The Vishay 092667-IRF7822TR is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 3.1W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 18A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Rds On @ Id,Vgs: 6.5 mOhm @ 15A, 4.5V
  • Supply and Demand Status: Balanced

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Quantity Unit Price Ext. Price
75+ $0.8652 $64.8900
185+ $0.7100 $131.3500
285+ $0.6879 $196.0515
390+ $0.6656 $259.5840
505+ $0.6434 $324.9170
675+ $0.5769 $389.4075
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MOQ: 75 pcs
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