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IRF7807A Real Image
Same model may have multiple batches, images only for reference.

IRF7807A

Part No IRF7807A
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.3A 8-SOIC
Datasheet
IRF7807A Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 17nC @ 5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046725-IRF7807A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7807A CAD Model

Description

The Infineon Technologies MOSFET 435871 is a N-channel power MOSFET.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id,Vgs: 25 mOhm @ 7A, 4.5V
  • Power Dissipation: 2.5W (Ta)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting: SMD (SMT)
  • Product Category: Discrete Semiconductor Product
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.7006 $66.5570
230+ $0.5749 $132.2270
350+ $0.5570 $194.9500
480+ $0.5391 $258.7680
625+ $0.5210 $325.6250
835+ $0.4672 $390.1120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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