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Same model may have multiple batches, images only for reference.
IRF840AS Real Image
Same model may have multiple batches, images only for reference.

IRF840AS

Part No IRF840AS
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) | MOSFET N-CH 500V 8A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 850mOhm at 4.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 38nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1018pF at 25V
Power Dissipation (Maximum) 3.1W, 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187403-IRF840AS
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF840AS CAD Model

Description

The Vishay Siliconix IRF840AS is an N-channel MOSFET with a maximum drain-source breakdown voltage of 500V and a continuous drain current of 8A.

  • Manufacturer: Vishay Siliconix
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage (Max): 500V
  • Continuous Drain Current: 8A
  • Mounting Package: D2PAK
  • Power Dissipation (Max): 3.1W and 125W
  • Gate-Source Voltage (th): 4V @ 250μA
  • Gate Charge (Qg): 38nC @ 10V
  • Input Capacitance (Ciss): 1018pF @ 25V
  • Supply and Demand Status: Limited
  • Manufacturer Pack Quantity: 50
  • MSL Level: 1 (Unlimited)
  • Manufacturer Homepage: www.irf.com

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